Aluminum nitride is a ceramic material with excellent comprehensive properties, and its research can be traced back to more than 100 years ago. It was discovered by F. Birgeler and A. Gutter in 1862. It was first synthesized by JW Mallets in 1877, but it had no practical application in the following 100 years. It is only used as a fertilizer as a nitrogen fixer. Since aluminum nitride is a covalent compound, it has a small self-diffusion coefficient and a high melting point, making it difficult to sinter. It was not until the 1950s that aluminum nitride ceramics were successfully manufactured for the first time and used as refractory materials for smelting pure iron, aluminum and aluminum alloys.

Natural AlN can be stabilized to 2200°C. The strength is high at room temperature, and it decreases slowly with the increase of temperature. With good thermal conductivity and low thermal expansion coefficient, it is a good thermal shock material. It is an ideal crucible material for smelting and casting pure iron, aluminum or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties. It is also a promising electrical component. The aluminum nitride coating on gallium arsenide protects it from ion implantation during annealing. Aluminum nitride is also a catalyst for the conversion of hexagonal boron nitride to cubic boron nitride. Slowly react with water at room temperature. It can be synthesized from aluminum powder in ammonia or nitrogen atmosphere at 800~1000℃. This product is white to grayish blue powder. Or synthesized by Al2O3-C-N2 system at 1600~1750℃, the product is gray powder. Or aluminum chloride is the opposite of ammonia. The coating can be prepared by vapor deposition from the AlCl3-NH3 system. Applications According to reports, most of the current research is developing a semiconductor (gallium nitride or aluminum gallium alloy)-based light-emitting diode that works under ultraviolet light with a wavelength of 250 nanometers. It was reported in May 2006 that inefficient diodes can emit light waves with a wavelength of 210 nm [1]. Through vacuum ultraviolet reflectance measurement, the energy gap of aluminum nitride single crystal is 6.2eV. Theoretically, the energy gap allows some waves with wavelengths around 200 nanometers to pass. But in business practice, there are still many difficulties to overcome. Aluminum nitride is used in optoelectronic engineering, including as an inductive layer in optical storage interfaces and electronic substrates, as a wafer carrier with high thermal conductivity, and for military applications. Due to the piezoelectric properties of aluminum nitride, the tensile extension of aluminum nitride crystal is also used in surface acoustic wave detectors. The detector is placed on the silicon chip. There are few places where these films can be reliably manufactured. Aluminum nitride ceramics have high room temperature and high temperature strength, small expansion coefficient, good thermal conductivity, and can be used as high-temperature structural parts of heat exchange equipment materials. Aluminum nitride ceramics can be used as a crucible and mold material for smelting metals such as aluminum, copper, silver, and lead by virtue of its corrosion resistance to metals and alloys such as iron and aluminum. Aluminum nitride supplier TRUNNANO (also known as Luoyang Tongrun Nano Technology Co., Ltd.) is a trusted global supplier and manufacturer of chemical materials, with more than 12 years of experience in providing super quality chemicals and nano materials. At present, our company has successfully developed a series of materials. The aluminum nitride produced by our company has high purity, fine particle size and high impurity content. Send us an email or click on the desired product to send an inquiry.

Copyright © 2002-2029 www.mis-asia.com. all rights reserved. XML mapping